Samsung Electronics has celebrated a significant milestone with the tool-in ceremony for its advanced semiconductor R&D complex, NRD-K, at the Giheung campus, Korea. This cutting-edge facility, spanning 109,000 square meters, aims to centralize R&D and production verification under one roof and is slated to begin operations in mid-2025. With a KRW 20 trillion (approximately $15 billion) investment planned by 2030, NRD-K will accelerate next-gen memory and system LSI development, integrating technologies like High NA EUV lithography and wafer-to-wafer bonding. The site, steeped in history as the birthplace of Samsung’s 64-megabit DRAM in 1992, is poised to redefine the future of semiconductors with innovations such as 3D DRAM, 1,000-layer V-NAND, and advanced packaging for HBM production.
My Take
Samsung’s investment in NRD-K demonstrates a strategic bet on the convergence of R&D and manufacturing to sustain semiconductor leadership. This approach secures next-generation capabilities like 3D DRAM and wafer bonding and reinforces Samsung’s role as a pioneer in memory and system-on-chip technologies. Collaboration with partners like Applied Materials signals an industry-wide push to accelerate innovation velocity amid growing competition. With this facility, Samsung is taking a decisive step to close the gap with industry leader TSMC, aiming to enhance its competitive edge in a sector where speed and precision are critical to success.
#Samsung #Semiconductors #Innovation #R&D #TechLeadership #MemoryTech #EUVLithography #FutureOfTech #AdvancedPackaging #HBM
Link to article:
https://news.samsung.com/global/samsung-reaches-key-milestone-at-new-semiconductor-rd-complex
Credit: Samsung